EXPLORING ZIRCONIUM-DI-OXIDE DIELECTRICS IN NANOSCALE CHANNEL AND GATE TUNED FINFETS FOR ADVANCED VLSI MIXED-SIGNAL DESIGNS

Abstract

Energy efficiency and circuit amplification have been the main goals of CMOS and IC research. The device was designed to maximize amplification and minimize power usage while carefully selecting materials. Modern technology often uses computationally intensive gadgets. Power efficiency and amplification are becoming more important in numerous applications. Several factors caused this major attitude shift. Due to increasing integration, the device needs smaller and quicker transistors than before. Conventional scaling has driven semiconductor technological breakthroughs for a decade. Scaling semiconductor devices has focused on velocity, power consumption, and density. As scaling nears its ultimate capacity, it has gotten more and harder for industry. Thus, researchers have investigated alternate possibilities and developed cutting-edge Nano materials and concepts to solve device manufacturing problems. High-k gate oxide dielectric materials are being studied to reduce electronic device leakage current and parasitic capacitance. Nano-sized high-k materials exist. Due to its thermal stability and ultrasmall particle size, zirconium dioxide could replace gate oxide in devices. Multi-gate devices meet ITRS roadmap 2012 standards, making them potential microelectronics technologies. Their high On current and short channel effect resistance are the main reasons. Due to its short-channel resilience, twin gate or multi gate devices allow enhanced scaling. This study tested Multi Gate MOSFET devices with different high-k materials to determine their efficiency.