AN INVESTIGATION INTO THE IMPACT OF POSITION-DEPENDENT EFFECTIVE MASS ON THE OPTICAL REFRACTIVE INDEX MODULATION IN IMPURITY-DOPED QUANTUM DOTS SUBJECTED TO GAUSSIAN WHITE NOISE

Abstract

We inspect the influence of position-dependent effective mass (PDEM) on the total optical refractive index change (RI) of impurity doped quantum dots (QDs) in presence and absence of noise. Noise has been introduced to the system additively and multiplicatively. The impurity potential is modeled by a Gaussian function and the noise applied being Gaussian white noise. A perpendicular magnetic field serves as a confinement and a static external electric field has been applied. The total RI change profiles have been followed as a function of incident photon energy for different values of PDEM. Always a comparison has been made with fixed effective mass (FEM) to understand the role of PDEM on total RI change profile. Using PDEM the said profile considerably deviates from that of FEM both in presence and absence of noise. The deviations also nicely reflect the outcome of interplay between noise and PDEM in designing the total RI change profiles. However, a switch from one mode of application of noise to another does not alter the total RI change profiles to any noticeable extent. The observations indicate the possibility of harnessing the total RI change profiles of doped QD systems exploiting noise and PDEM.